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1

Determination of the electron saturation velocity in pseudomorphic AlxGa1-xAs/InyGa1-yAs MODFETs at 300 and 100 K

Dickmann, J., Heedt, C.H., Daembkes, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1989

Language:

english

File:

PDF, 502 KB

english, 1989

2

(Al0.7Ga0.3)0.5In0.5 P/In0.15Ga0.85As/Ga As heterostructure field effect transistors with very thin highly p-doped surface layer

Dickmann, J., Berg, M., Geyer, A., Daembkes, H., Scholz, F., Moser, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 612 KB

english, 1995

3

Improved short-channel GaAs MESFET's by use of higher doping concentration

Daembkes, H., Brockerhoff, W., Heime, K., Cappy, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1984

Language:

english

File:

PDF, 697 KB

english, 1984

4

The n-channel SiGe/Si modulation-doped field-effect transistor

Daembkes, H., Herzog, H.-J., Jorke, H., Kibbel, H., Kasper, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1986

Language:

english

File:

PDF, 782 KB

english, 1986

5

[IEEE 32nd European Microwave Conference, 2002 - Milan, Italy (2002.10.4-2002.10.6)] 32nd European Microwave Conference, 2002 - Full 26GHZ MMIC Chipset for Telecom Applications in SMD-Type Packages

Beilenhoff, Klaus, Quentin, Pierre, Tranchant, Sylvie, Vaudescal, Olivier, Parisot, Marc, Daembkes, Heinrich

Year:

2002

Language:

english

File:

PDF, 3.87 MB

english, 2002

6

[IEEE IEEE NTC '95 The Microwave Systems Conference. Conference - Orlando, FL, USA (17-19 May 1995)] IEEE NTC,Conference Proceedings Microwave Systems Conference - GaAs MMIC based components and frontends for millimeterwave communication and sensor systems

Daembkes, H., Adelseck, B., Schmidt, L.P., Schroth, J.

Year:

1995

Language:

english

File:

PDF, 340 KB

english, 1995

7

I n 0.52A l 0.48A s / I n x G a 1- x A s (0.53< x

Dickmann, Jürgen, Riepe, Klaus, Geyer, Arthur, Maile, Bernd E., Schurr, Anton, Berg, Michael, Daembkes, Heinrich

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 1.05 MB

1996

8

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (5-7 Aug. 1991)] [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET's

Dickmann, J., Woelk, C., Schurr, A., Wiersch, A., Kohn, E., Narozny, P., Daembkes, H.

Year:

1991

Language:

english

File:

PDF, 696 KB

english, 1991

9

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - AlInAs/GaInAs pseudomorphic HEMTs: Design and performances

Dickmann, J., Riepe, K., Daembkes, H., Kunzel, H.

Year:

1993

Language:

english

File:

PDF, 372 KB

english, 1993

10

Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

Dickmann, J., Daembkes, H., Nickel, H., Schlapp, W., Losch, R.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 197 KB

english, 1991

11

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (5-7 Aug. 1991)] [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Depleted surface layer AlInAs/GaInAs/InP HFETs

Daembkes, H., Dickmann, J., Wiersch, A., Kunzel, H.

Year:

1991

Language:

english

File:

PDF, 518 KB

english, 1991

12

[IRE 1985 International Electron Devices Meeting - ()] 1985 International Electron Devices Meeting - Fabrication and properties of n-channel SiGe/Si modulation doped field-effect transistors grown by MBE

Daembkes, H., Herzog, H.-J., Jorke, H., Kibble, H., Kasper, E.

Year:

1985

Language:

english

File:

PDF, 181 KB

english, 1985

13

[IEEE Design, Automation & Test in Europe Conference - Nice, France (2007.04.16-2007.04.20)] 2007 Design, Automation & Test in Europe Conference & Exhibition - Tutorial: The Methodological and Technological Dimensions of Technology Transfer for Embedded Systems in Aeronautics and Space

Pardessus, Thierry, Daembkes, Heinrich, Arning, Richard

Year:

2007

Language:

english

File:

PDF, 134 KB

english, 2007

14

Multiple quantum well AlGaAs/GaAs field-effect transistor structures for power applications

Daembkes, Heinrich, Weimann, Günter

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 475 KB

english, 1988

15

[IEEE 30th European Microwave Conference, 2000 - Paris, France (2000.10.4-2000.10.6)] 30th European Microwave Conference, 2000 - Influence of Advanced GaAs MMICs on Structure and Cost of High Frequency TR-Modules for Communication and Radar Systems for Volume Markets

Daembkes, H., Quentin, P., Camiade, M., Beilenhoff, K., Adelseck, B., Schickl, O., Schroth, J., Viaud, J.P., Lajugie, M., Chapelle, P., Turin, M.

Year:

2000

Language:

english

File:

PDF, 4.13 MB

english, 2000

16

Al0.25Ga0.75As/In0.25Ga0.75As pseudomorphic MODFET with high DC and RF performance

Dickmann, J., Geyer, A., Daembkes, H., Nickel, H., Lösch, R., Schlapp, W.

Journal:

Electronics Letters

Year:

1991

Language:

english

File:

PDF, 305 KB

english, 1991

17

Analytical Model to Determine the Gate Leakage Current inIn0.52Al0.48As/InxGa1-xAsPseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission

J. Dickmann, H. Daembkes, S. Schildberg, H. Fittng, P. Ellrod, F. J. Tegude

Year:

1994

File:

PDF, 764 KB

1994

18

p/sup +/-thin surface layer Schottky-barrier enhanced high speed pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.15/Ga/sub 0.85/As and Ga/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As MODFETs

J. Dickmann, M. Berg, T. Hackbarth, R. Deufel, H. Daembkes, F. Scholz, M. Moser

Year:

1993

Language:

english

File:

PDF, 570 KB

english, 1993

19

[IEEE 28th European Microwave Conference, 1998 - Amsterdam, Netherlands (1998.10.4-1998.10.6)] 28th European Microwave Conference, 1998 - GaAs MMICs for Automotive Applications

Daembkes, Heinrich, Camiade, Marc

Year:

1998

Language:

english

File:

PDF, 5.64 MB

english, 1998

20

Advanced Model-Based Engineering of Embedded Systems ||

Pohl, Klaus, Broy, Manfred, Daembkes, Heinrich, Hönninger, Harald

Year:

2016

Language:

english

File:

PDF, 42.87 MB

english, 2016

21

Novel fabrication process for Si2N4 passivated InAlAs/UnGaAs/InP HFETS

Dickmann, J., Riepe, K., Haspeklo, H., Maile, B., Daembkes, H., Nickel, H., Lösch, R., Schlapp, W.

Journal:

Electronics Letters

Year:

1992

Language:

english

File:

PDF, 225 KB

english, 1992

22

Editorial to the theme section on model-based design of cyber-physical systems

Broy, Manfred, Daembkes, Heinrich, Sztipanovits, Janos

Journal:

Software & Systems Modeling

Year:

2018

Language:

english

File:

PDF, 305 KB

english, 2018

23

Tin Diffusion from Doped Oxides for Fabricating GaAs Microwave Devices

Arnold, Norbert, Daembkes, Heinrich, Heime, Klaus

Journal:

Japanese Journal of Applied Physics

Year:

1980

File:

PDF, 560 KB

1980

24

High gain 28GHz coplanar waveguide monolithic amplifier on InP substrate

Dickmann, J., Koßlowski, S., Maile, B.E., Haspeklo, H., Heuthe, S., Geyer, A., Riepe, K., Schurr, A., Daembkes, H., Künzel, H., Böttcher, J.

Journal:

Electronics Letters

Year:

1993

Language:

english

File:

PDF, 327 KB

english, 1993

25

ChemInform Abstract: THE PREPARATIVE USE OF THIAZOLIUM-CATALYZED ACYLOIN AND BENZOIN FORMATION, II. PRODUCTION OF UNSYMMETRIC ACYLOINS AND α-DIKETONES

STETTER, H., DAEMBKES, G.

Journal:

Chemischer Informationsdienst

Year:

1977

File:

PDF, 227 KB

1977